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| SEMICONDUCTOR TECHNICAL DATA General Description KHB011N40P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB011N40P1 A O C F E G B Q I DIM MILLIMETERS _ 9.9 + 0.2 A B C D E This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P F G H I J 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 4.5 + 0.2 _ 2.4 + 0.2 _ 9.2 + 0.2 H K L M N O P Q 1 2 3 MAXIMUM RATING (Tc=25 RATING CHARACTERISTIC SYMBOL KHB011N40F1 UNIT KHB011N40P1 KHB011N40F2 400 30 10.5 ID 6.6 IDP EAS EAR dv/dt 135 PD 1.07 Tj Tstg 150 -55 150 0.35 W/ 42 360 13.5 4.5 44 6.6* 42* mJ mJ V/ns W Q 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB KHB011N40F1 Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS V V 10.5* A K E A F C O DIM B MILLIMETERS L M J R D N N H A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 12.57 + 0.2 _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 G 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient TO-220IS (1) KHB011N40F2 RthJC RthCS RthJA A 0.93 0.5 62.5 2.86 62.5 C F /W S /W /W P E G B DIM MILLIMETERS * : Drain current limited by maximum junction temperature. K L L R J PIN CONNECTION D M D N N D H G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 0.3 12.0 + 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/1 KHB011N40P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=400V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=5.25A 400 2.0 0.54 0.5 10 4.0 100 0.53 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB011N40P1/F1/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 1 8.0 V 10 7.0 V 6.0 V 5.5 V 5.0 V Bottom: 4.5V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 10 0 10 0 150 C 25 C -1 -55 C 10 -1 10 -1 10 0 10 1 10 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 Fig4. RDS(ON) - ID 2.0 On - Resistance RDS(ON) () VGS = 0V IDS = 250A 1.1 1.5 VGS = 10V 1.0 1.0 VGS = 20V 0.9 0.5 0.8 -100 0 -50 0 50 100 150 0 5 10 15 20 25 30 35 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS = 10V IDS =5.25A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 1.0 1.2 1.4 1.6 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperture Tj ( C ) 2007. 5. 10 Revision No : 0 3/7 KHB011N40P1/F1/F2 Fig7. C - VDS 2800 2400 12 Fig8. Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz ID = 10.5A VDS = 80V VDS = 200V VDS = 320V 10 8 6 4 2 0 0 5 10 Capacitance (pF) 2000 1600 Ciss Coss 1200 800 400 0 10-1 100 101 Crss 15 20 25 30 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB011N40P1) 102 Operation in this area is limited by RDS(ON) 10s Fig10. Safe Operation Area (KHB011N40F1, KHB011N40F2) 102 Operation in this area is limited by RDS(ON) 10s Drain Current ID (A) Drain Current ID (A) 10 1 100s 101 0 100s 1ms 1ms 10 10ms 100ms 100 Tc= 25 C Tj = 150 C -1 Single nonrepetitive pulse 10ms 100ms DC 10 -1 DC 10 100 101 102 103 10 Tc= 25 C Tj = 150 C -2 Single nonrepetitive pulse 100 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 12 10 Drain Current ID (A) 8 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB011N40P1/F1/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 Single Pulse 0.02 0.01 - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM 0.02 0.01 t2 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB011N40P1/F1/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V ID(t) VGS VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 0.5 VDSS 25 VDS 10V VGS 10% tf td(on) ton tr td(off) toff VGS 2007. 5. 10 Revision No : 0 6/7 KHB011N40P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 x VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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